| Title |
Updated |
Grade |
Popularity |
Size |
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|
 Silvaco TCAD ATHENA User Manual |
2009-01-16 |
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155 |
10451.29 KB |
| 2.3.1: Procedure Overview
ATHENA
is designed as a process simulation framework. The framework includes simulator independent operations and simulator specific functions that simulate different process steps (e.g., implant, RIE, or photoresist .. |
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| ATLAS User’s Manual |
2009-01-16 |
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66 |
38677.51 KB |
| 2.6: Defining A Structure
There are three ways to define a device structure in ATLAS.
The first way is to read an existing structure from a file. The structure is created either by an earlier ATLAS run or another program such as ATHENA or DEVE.. |
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| Mercury User’s Manual |
2009-01-16 |
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29 |
3816.35 KB |
| 3.1: Introduction
The core MERCURY simulator solves the physical equations that describe carrier population and transport throughout the device domain. A variety of different physical models are included, which vary in sophistication and detail.. |
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| MOCASIM User’s Manual |
2009-01-16 |
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57 |
1830.04 KB |
| 1.1: Overview of MOCASIM
MOCASIM is an advanced three-valley Monte Carlo simulator designed to generate the transport parameters used in SILVACO’S physical device simulators.
MOCASIM should be used with the VWF INTERACTIVE TOOLS, which includ.. |
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| SSUPREM3 User’s Manual |
2009-01-16 |
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62 |
6139.59 KB |
| 2.9: Ion Implantation
SSUPREM3 supports six ion-implantation models: The Boltzmann transport equation, Monte Carlo methods, and four analytical models (simple Gaussian, double-sided Gaussian, Pearson IV, and double Pearson distributions). The a.. |
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| TCAD Tutorial and Examples Volume I |
2009-01-16 |
|
379 |
5275.23 KB |
| 1.1.1. mos1ex01.in: NMOS: Id/Vgs and Threshold Voltage Extraction
Requires: SSUPREM4/SPISCES
Basic MOS ATHENA to ATLAS interface example simulating an Id/Vgs curve and extracting threshold
voltage and other SPICE parameters. No advanced featu.. |
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| TCAD Tutorial and Examples Volume III |
2009-01-16 |
|
913 |
3472.3 KB |
| 12.1.6 hbtex06.in: InGaAs/InP HBT DC and High Frequency Characteristics
Requires: DEVEDIT/BLAZE
In this example an HBT structure based on the InGaAs-InP material system is constructed using
DEVEDIT. The structure is then passed to ATLAS for e.. |
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| TCAD Tutorial and Examples Volume II |
2009-01-16 |
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113 |
4749.14 KB |
| seuex06.in: SEU in Memory Cell Transistor
Requires: DevEdit3D/DEVICE3D
This example demonstrates SEU in a MOSFET with an external resistor and capacitor emulating a
RAM cell. The example shows:
• formation of structure in DEVEDIT3D
&#.. |
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| TonyPlot 3D User’s Manual |
2009-01-16 |
|
124 |
2438.48 KB |
| Overview
TONYPLOT3D is a 3D graphics viewer, capable of displaying data generated from 3D process and device simulators. It also allows you to control labeling, lighting, shading and other plot aspects.
This chapter will explain its applicatio.. |
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| Victory Process User’s Manual |
2009-01-16 |
|
75 |
6040.49 KB |
| Accessing The Examples
VICTORYPROCESS has several standard examples that demonstrate how the program is used to simulate different technologies. These examples are a good starting point for creating your own simulations. The examples are access.. |
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